According to BusinessKorea, Samsung electronics will start mass production of 3nm semiconductors based on full surround gate (GAA) technology on June 30.
Samsung Electronics will officially announce mass production of gaA-BASED 3nm semiconductors on June 30, the report said. GAA transistor architecture is superior to current FinFET architecture because it can reduce chip size and power consumption.
If confirmed, Samsung will beat TSMC and Intel to mass produce 3-nanometer chips in the second half of this year and next year, respectively.
It is reported that Samsung electronics and TSMC have different technology paths in the highly competitive 3nm process. Samsung electronics pioneered the full surround gate (GAA) transistor, while TSMC continues to use FinFET architecture. Samsung electronics has previously said that the 3nm process with fully wrap-around gate technology will improve performance by 30 percent, reduce energy consumption by 50 percent and increase logic area efficiency by more than 45 percent compared to current fin-type FET architectures.