Rectifier diodes are generally planar silicon diodes used in various power supply rectifier circuits. When choosing rectifier diode, the following important parameters should be considered.
(1) Maximum average rectifier current IF: refers to the maximum forward average current allowed to pass through when the diode works for a long time. The current is determined by the junction area of PN junction and the heat dissipation condition. When using, it should be noted that the average current through the diode can not be greater than this value, and to meet the heat dissipation conditions. For example, the IF of the 1N4000 series diode is 1A.
(2) Maximum reverse working voltage VR: refers to the maximum reverse voltage allowed to be applied at both ends of the diode. If the value is greater than this value, the reverse current (IR) increases sharply, and the unidirectional conductivity of the diode is destroyed, resulting in reverse breakdown. Usually take half of the reverse breakdown voltage (VB) as (VR). For example, VR of 1N4001 is 50V, VR of 1N4002-1N4006 is 100V, 200V, 400V, 600V, and 800V, and VR of 1N4007 is 1000V
(3) Maximum reverse current IR: it is the reverse current allowed to flow through the diode under the highest reverse operating voltage. This parameter reflects the one-way conductive performance of the diode. Therefore, the lower the current value, the better the diode quality.
(4) Breakdown voltage VB: refers to the voltage value of the sharp bending point of the reverse volt-ampere characteristic curve of the diode. When reverse is soft characteristic, it refers to the voltage value under the condition of given reverse leakage current.
(5) Maximum working frequency FM: it is the highest working frequency of the diode under normal conditions. It is mainly determined by the junction capacitance and diffusion capacitance of PN junction. If the operating frequency exceeds FM, the unidirectional conductivity of the diode will not be well reflected. For example, the FM of the 1N4000 series diode is 3kHz. Other quick-recovery diodes are used for higher frequency ac rectification, such as switching power supplies.
(6) Reverse recovery time TRR: refers to the reverse recovery time under the specified load, forward current and maximum reverse transient voltage.
(7) Zero bias capacitance CO: refers to the sum of the capacity of the diffusion capacitance and junction capacitance when the voltage at both ends of the diode is zero. It is worth noting that, due to the limitation of manufacturing process, even the same type of diode its parameters are very discrete. The parameters given in the manual are usually in a range, and the corresponding parameters will change if the test conditions change. For example, the IR of 1N5200 series silicon sealed rectifier diode measured at 25°C is less than 10uA, but at 100°C it becomes less than 500uA.
The rectifier diode used in the common series regulated power supply circuit does not have high requirements on the reverse recovery time of cut-off frequency. As long as the rectifier diode with the maximum rectifier current and the maximum reverse operating current meet the requirements according to the requirements of the circuit, it can be. For example, 1N series, 2CZ series, RLR series and so on.
The rectifier circuit of switching regulator power supply and the rectifier diode used in the pulse rectifier circuit should choose the rectifier diode with high working frequency and short reverse recovery time (RU series, EU series, V series, 1SR series, etc.) or choose the fast recovery diode.
Diode model uses maximum reverse operating voltage VR maximum average rectifier current IF
1N4001 Silicon Rectifier diode 50V, 1A,(Ir=5uA,Vf=1V,Ifs=50A)
1N4002 Silicon Rectifier Diode 100V, 1A,
1N4003 Silicon Rectifier Diode 200V, 1A,
1N4004 Silicon Rectifier Diode 400V, 1A,
1N4005 Silicon Rectifier Diode 600V, 1A,
1N4006 Silicon Rectifier Diode 800V, 1A,
1N4007 Silicon Rectifier Diode 1000V, 1A,
1N4148 Silicon switching diode 75V, 4PF,Ir=25nA,Vf=1V,
1N5391 Silicon Rectifier Diode 50V, 1.5A,(Ir=10uA,Vf=1.4V,Ifs=50A)
1N5392 Silicon Rectifier Diode 100V,1.5A,
1N5393 Silicon Rectifier Diode 200V,1.5A,
1N5394 Silicon Rectifier Diode 300V,1.5A,
1N5395 Silicon Rectifier Diode 400V,1.5A,
1N5396 Silicon Rectifier Diode 500V,1.5A,
1N5397 Silicon Rectifier Diode 600V,1.5A,
1N5398 Silicon Rectifier Diode 800V,1.5A,
1N5399 Silicon Rectifier Diode 1000V,1.5A,
1N5400 Silicon Rectifier diode 50V, 3A,(Ir=5uA,Vf=1V,Ifs=150A)
1N5401 Silicon Rectifier Diode 100V,3A,
1N5402 Silicon Rectifier Diode 200V,3A,
1N5403 Silicon Rectifier Diode 300V,3A
1N5404 Silicon Rectifier Diode 400V,3A,
1N5405 Silicon Rectifier Diode 500V,3A,
1N5406 Silicon Rectifier Diode 600V,3A,
1N5407 Silicon Rectifier Diode 800V,3A,
1N5408 Silicon Rectifier Diode 1000V,3A,
1S1553 Silicon Switching Diode 70V,100mA,300mW, 3.5PF, 300mA
1S1554 Silicon Switching Diode 55V,100mA,300mW, 3.5PF, 300mA
1S1555 Silicon Switching Diode 35V,100mA,300mW, 3.5PF, 300mA
1S2076 Silicon switching diode 35V,150mA,250mW, 8nS, 3PF, 450mA, Ir≤1uA,Vf≤0.8V,≤ 1.8pF,
1S2076A Silicon switching diode 70V,150mA,250mW,8nS, 3PF, 450mA, 60V, Ir≤1uA,Vf≤0.8V,≤ 1.8pF,
1S2471 Silicon switching diode 80V, Ir≤ 0.5UA,Vf≤1.2V,≤2PF,
1 s2471b silicon switching diode 90 v, 150 ma, 250 mw, 3 ns, 3 pf, 450 ma,
1 s2471v silicon switching diode 90 v, 130 ma, 300 mw, 4 ns, 2 pf, 400 ma,
1S2472 Silicon switching diode 50V, Ir≤ 0.5UA,Vf≤1.2V,≤2PF,
1S2473 Silicon switching diode 35V, Ir≤ 0.5UA,Vf≤1.2V,≤3PF,
1 s2473h silicon switching diode 40 v, 150 ma, 300 mw, 4 ns, 3 pf, 450 ma,
2AN1 diode 5A, f=100KHz
2 ck100 silicon switching diode 40 v, 150 ma, 300 mw, 4 ns, 3 pf, 450 ma,
Ck101 Silicon Switching Diode 70V,150mA,250mW,8nS, 3PF, 450mA,
2CK102 Silicon Switching Diode 35V 150mA 250mW 8nS 3PF 450mA
2CK103 Silicon Switching Diode 20V,100mA, 2PF, 100mA,
2CK104 Silicon Switching Diode 35V,100mA, 10nS,2PF, 225mA,
2CK105 Silicon Switching Diode 35V,100mA, 4nS,2PF, 225mA,
2CK106 Silicon Switching Diode 75V,100mA, 4nS,2PF, 100mA
2 ck107 silicon switching diode 90 v, 130 ma, 300 mw, 4 ns, 2 pf, 400 ma,
Ck108 Silicon Switching Diode 70V,100mA,300mW, 3.5PF, 300mA,
2CK109 Silicon Switching Diode 35V,100mA,300mW, 3.5PF, 300mA
2 ck110 silicon switching diode 90 v, 150 ma, 250 mw, 3 ns, 3 pf, 450 ma,
2CK111 Silicon switching Diode 55V,100mA,300mW, 3.5PF, 300mA
2CK150 silicon switching diode 15V, Ir≤25nA, Vf≤1.2V,≤2PF,
2CK161 Silicon switching diode 15V, Ir≤25nA, Vf≤1.2V,≤2PF,
Ck4148 silicon switching diode 75V, Ir≤25nA,Vf=1V,4PF,
2CK2076 Silicon switching diode 35V, Ir≤1uA,Vf≤0.8V, ≤ 1.8pf,
2CK2076A Silicon switching diode 60V, Ir≤1uA,Vf≤0.8V, ≤ 1.8pf,
2CK2471 silicon switching diode 80V, Ir≤ 0.5UA,Vf≤1.2V,≤2PF,
2CK2472 Silicon switching diode 50V, Ir≤ 0.5UA,Vf≤1.2V,≤2PF,
2CK2473 silicon switching diode 35V, Ir≤ 0.5UA,Vf≤1.2V,≤3PF,
2CN1A silicon Diode 400V, 1A, F =100KHz,
2CN1B Silicon Diode 100V, 1A, F =100KHz,
2CN3 silicon diode V, 1A, f=100KHz,
2CN3D silicon Diode V, 1A, f=100KHz,
2CN3E silicon Diode V, 1A, f=100KHz,
2CN3F silicon diode V, 1A, f=100KHz,
2CN3G silicon Diode V, 1A, f=100KHz,
2CN3H silicon diode V, 1A, f=100KHz,
2CN3I silicon Diode V, 1A, f=100KHz,
2CN3K silicon Diode V, 1A, f=100KHz,
2CN4D silicon Diode V, 1.5A,f=100KHz,
2CN5D silicon Diode V, 1.5A, f=100KHz,
2CN6 silicon diode V, 1A, f=100KHz,
2CP1553 silicon diode Ir≤ 0.5UA,Vf≤1.4V,≤ 3.5pf,
2CP1554 DIODE Ir≤ 0.5UA,Vf≤1.4V,≤ 3.5pf,
2CP1555 silicon diode Ir≤ 0.5UA,Vf≤1.4V,≤3.5PF